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New GaN Devices
SuperGaN SiP Family
Increases by Two
- New 150 mΩ and 480 mΩ SiPs join
flagship 240 mΩ SiP - Power level support from 30 W to ~200 W
- Simple design approach, fewer components
- Used in high performance, low-profile
UBS-C and IoT adapters
News Release
Renesas to Acquire Transphorm
to Expand its Power Portfolio
with GaN Technology
- Acquisition Accelerates Renesas’ Wide Bandgap Expertise
and Roadmap to Fast-Growing Market Opportunities for EVs,
Data Centers & AI Power, and Renewable Energy
White Paper
Normally-Off D-Mode GaN
vs. E-Mode GaN
- Normally-off D-Mode GaN harnesses GaN’s natural benefits,
whereas e-mode makes performance compromises.
New GaN Devices
4-Lead SuperGaN FETs
- TO-247-4L packages
- 35 and 50 mΩ RDS(on)
- Improved switching performance
over alternative technologies
New Reference Design
100 W USB-C PD
QRF Adapter Board
- Uses cost-effective SuperGaN SiP
from Weltrend - Second SiP board, following
65 W USB-C board - Enables economies of scale
New Reference Designs
300 W + 600 W AC-to-DC
Battery Chargers
- CC/CV charging profile
- Up to 95% peak efficiency
- Robust SuperGaN FETs with
analog controllers
Performance Enhancement
Transphorm + Allegro
MicroSystems Collaborate
- SuperGaN FETs + Isolated Gate Drivers
purpose-built for GaN - 30% footprint reduction
- Evaluation board available
New SuperGaN Device
First-Ever
Top-Side Cooled
TOLT GaN Package
- 72 mΩ surface mount device
- Strong thermal performance
- Simplified SMD-based
PCB assembly
New SuperGaN Devices
Industry Standard
TOLL Packages
- 35, 50, and 72 mΩ SMDs
- Drop-in replacement option for e-mode
- Supports power-hungry
AC-to-DC / DC-to-DC systems
IN PRODUCTION TICKER
Transphorm Wire
Press Release4月 24 2024Transphorm and Weltrend Semiconductor Release New Integrated GaN System-in-PackagesEvent3月 15 2024Automotive Tech Forum 2024Press Release2月 6 2024Transphorm at APEC 2024: SuperGaN Innovation for Low to High Power Applications
Press Release1月 17 2024Transphorm Announces Two 4-Lead TO-247 Devices, Expanding Product Portfolio for High Power Server, Renewable, Industrial Power ConversionPress Release1月 11 2024Renesas to Acquire Transphorm to Expand its Power Portfolio with GaN TechnologyPress Release12月 14 2023Transphorm and Weltrend Semiconductor’s New GaN System-In-Package Delivers Competitive Advantage by Supporting Multiple Power Levels
Press Release11月 30 2023Transphorm Releases Two Battery Charger Reference Designs Ideal for Two- and Three-Wheeled Electric VehiclesEvent11月 29 2023PE Internațional Conference 2024Event11月 29 2023APEC 2024
Event11月 29 2023IEEE EDS Continuing Education Webinar SeriesPress Release11月 15 2023Transphorm and Allegro MicroSystems Team Up to Increase GaN Power System Performance for High Power ApplicationsPress Release10月 26 2023Transphorm’s Top-Side Cooled TOLT FET Delivers Superior Thermal and Electrical Performance for Computing, AI, Energy, and Automotive Power Systems
Press Release10月 10 2023Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI ApplicationsPress Release9月 5 2023New Transphorm White Paper: Normally-Off D-Mode GaN Advantages Vs. Normally-Off E-Mode GaNPress Release8月 28 2023Transphorm at electronica India 2023: High Voltage SuperGaN Solutions Boosting Electric Vehicle Performance